Effect of an indium-tin-oxide overlayer on transparent Ni/Au ohmic contact on p-type GaN
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1534630
Reference14 articles.
1. InGaN-Based Multi-Quantum-Well-Structure Laser Diodes
2. A study of the electrical characteristics of various metals on p-type GaN for ohmic contacts
3. Effect of a Au Overlayer on Thermal Stability of Pt Transparent Ohmic Contact on p-Type GaN
4. Low-resistant and high-transparent Ru/Ni ohmic contact on p-type GaN
5. Low-resistance ohmic contacts to p-type GaN achieved by the oxidation of Ni/Au films
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