Effect of growth temperature on strain barrier for metalorganic vapor phase epitaxy grown strained InGaAs quantum well with lattice matched InGaAsP barriers-Reference-Cited by-同舟云学术

Effect of growth temperature on strain barrier for metalorganic vapor phase epitaxy grown strained InGaAs quantum well with lattice matched InGaAsP barriers

Published:2002-05 Issue:9 Volume:91 Page:5875-5881
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Sharma T. K.,Arora B. M.,Kumar S.,Gokhale M. R.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.1464210

Reference33 articles.

1. High-power 0.8 mu m InGaAsP-GaAs SCH SQW lasers

2. 8 W continuous wave front‐facet power from broad‐waveguide Al‐free 980 nm diode lasers

3. Optical components for WDM lightwave networks

4. Optical fiber amplifiers for WDM optical networks

5. MOVPE growth of highly strained InGaAs/GaAs quantum wells

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