Effect of light-hole tunnelling on the excitonic properties of GaAsP/AlGaAs near-surface quantum wells-Reference-Cited by-同舟云学术

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Effect of light-hole tunnelling on the excitonic properties of GaAsP/AlGaAs near-surface quantum wells

Published:2013-02-11 Issue:3 Volume:28 Page:035016
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Pal Suparna,Singh S D,Porwal S,Sharma T K,Khan S,Jayabalan J,Chari Rama,Oak S M

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/0268-1242/28/i=3/a=035016/pdf

Reference30 articles.

1. Ultrafast 1.55‐μm photoresponses in low‐temperature‐grown InGaAs/InAlAs quantum wells

2. Surface quantum wells

3. High-power passively mode-locked semiconductor lasers

4. Sub-500-fs soliton-like pulse in a passively mode-locked broadband surface-emitting laser with 100 mW average power

5. Carrier dynamics in Ga0.53In0.47As∕InP near-surface quantum wells

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Estimation of electron spin polarization from circularly polarized photoluminescence in strained quantum wells;Journal of Applied Physics;2017-07-14

2. Quantum Dots of Gallium and Indium Arsenide Phosphides: Opto-electronic Properties, Spin Polarization and a Composition Effect of Quantum Confinement;Virtual Synthesis of Nanosystems by Design;2015

3. Quantum beats from the coherent interaction of hole states with surface state in near-surface quantum well;Applied Physics Letters;2014-08-18

4. Intersubband plasmon-phonon coupling in GaAsP/AlGaAs near surface quantum well;Applied Physics Letters;2013-05-06

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