Meniscus lines as nucleation sites for the active layer of a double‐heterostructure laser grown by LPE
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.89206
Reference9 articles.
1. The analysis of optical scattering in double-heterostructure and five-layer heterostructure (GaAl)As/GaAs injection lasers
2. Very low‐threshold double‐heterojunction AlxGa1−xAs injection lasers
3. Phänomenologische Theorie der Kristallabscheidung an Oberflächen. II
4. A phenomenological study of meniscus lines on the surfaces of GaAs layers grown by LPE
5. Growth of Smooth Uniform Epitaxial Layers by Liquid‐Phase‐Epitaxial Method
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1. Epitaxy;Reports on Progress in Physics;1982-05-01
2. Influence of cooling rate and melt configuration on rake lines in the active layer of AlxGa1-xAs DH lasers;Journal of Crystal Growth;1982-04
3. An automated system for the growth of multilayered structures in the (GaAl)As system by LPE;Journal of Crystal Growth;1979-02
4. VPE Growth of III/V Semiconductors;Annual Review of Materials Science;1978-08
5. Conditions for constant growth rate by LPE from a cooling, static solution;Journal of Crystal Growth;1978-05
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