Very low‐threshold double‐heterojunction AlxGa1−xAs injection lasers
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.88351
Reference7 articles.
1. Threshold reduction by the addition of phosphorus to the ternary layers of double‐heterostructure GaAs lasers
2. Low threshold-current density in 5-layer-heterostructure (GaAl)As/GaAs localised-gain-region injection lasers
3. Thin solution multiple layer epitaxy
4. Te and Ge — doping studies in Ga1−xAlxAs
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4. Modal analysis of IncGaAsP-InP, GaAs/AlGaAs-GaAs, and InGaAsP/AlGaAs-GaAs MIS heterostructure lasers;International Journal of Infrared and Millimeter Waves;1986-06
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