Electron traps in dislocation‐free In‐alloyed liquid encapsulated Czochralski GaAs and their annealing properties
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.96848
Reference6 articles.
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5. Deep‐level transient spectroscopy: A new method to characterize traps in semiconductors
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1. Effect of indium doping on transient transport phenomena in semi-insulating GaAs;Physical Review B;2000-10-15
2. Bistable behavior of a medium-deep center related to EL5 and EL6 in n-type bulk GaAs;Journal of Applied Physics;1998-09-15
3. Formation of EL2, AsGaand U band in irradiated GaAs: Effects of annealing;Journal of Applied Physics;1996-08
4. Comparison of indium-doped and undoped GaAs minimum ionising particle detectors;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;1996-01
5. On deep electron traps in semi-insulating GaAs crystals by Thermally Stimulated Depolarization Current;Solid-State Electronics;1995-06
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