Growth and characterization of CaF2/Ge/CaF2/Si(111) quantum dots for resonant tunneling diodes operating at room temperature
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1494465
Reference14 articles.
1. Resonant tunneling via microcrystalline-silicon quantum confinement
2. Electrical properties of a silicon quantum dot diode
3. Avalanche amplification of multiple resonant tunneling through parallel silicon microcrystallites
4. Resonant tunneling through a self-assembled Si quantum dot
5. Fabrication and Electrical Characteristics of Single Electron Tunneling Devices Based on Si Quantum Dots Prepared by Plasma Processing
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