Fabrication and Electrical Characteristics of Single Electron Tunneling Devices Based on Si Quantum Dots Prepared by Plasma Processing-Reference-Cited by-同舟云学术

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Fabrication and Electrical Characteristics of Single Electron Tunneling Devices Based on Si Quantum Dots Prepared by Plasma Processing

Published:1997-06-30 Issue:Part 1, No. 6B Volume:36 Page:4038-4041
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Dutta Amit,Kimura Masao,Honda Yoshiaki,Otobe Masanori,Itoh Akira,Oda Shunri

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

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