Resistive switching of oxygen enhanced TiO2 thin-film devices-Reference-Cited by-同舟云学术

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Resistive switching of oxygen enhanced TiO2 thin-film devices

Published:2013-01-07 Issue:1 Volume:102 Page:013506
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Salaoru Iulia,Prodromakis Themistoklis,Khiat Ali,Toumazou Christofer

Funder

Engineering and Physical Sciences Research Council

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4774089

Reference32 articles.

1. Resistance switching memories are memristors

2. Self-organized computation with unreliable, memristive nanodevices

3. Biomimetic model of the outer plexiform layer by incorporating memristive devices

4. Learning Abilities Achieved by a Single Solid-State Atomic Switch

5. Nanoscale Memristor Device as Synapse in Neuromorphic Systems

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1. Modeling stoichiometric and oxygen defective TiO2 anatase bulk and (101) surface: structural and electronic properties from hybrid DFT;Journal of Molecular Modeling;2023-05-11

2. Continuous Film Based on Zeolitic Imidazole Framework-8 for an Enhanced Resistive Memory Property;Physical Review Applied;2022-06-01

3. To Be or Not to Be – Review of Electrical Bistability Mechanisms in Polymer Memory Devices;Small;2022-02-08

4. Stability-Enhanced Resistive Random-Access Memory via Stacked InxGa1–xO by the RF Sputtering Method;ACS Omega;2021-04-13

5. Self-rectifying and forming-free nonvolatile memory behavior in single-crystal TiO2 nanowire memory device;Journal of Alloys and Compounds;2021-03

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