Stability-Enhanced Resistive Random-Access Memory via Stacked InxGa1–xO by the RF Sputtering Method
Author:
Affiliation:
1. Institute of Microelectronics & Department of Electrical Engineering, National Cheng Kung University, Tainan City 70101, Taiwan
2. Department of Photonics, National Cheng Kung University, Tainan City 70101, Taiwan
Funder
Ministry of Science and Technology, Taiwan
Publisher
American Chemical Society (ACS)
Subject
General Chemical Engineering,General Chemistry
Link
https://pubs.acs.org/doi/pdf/10.1021/acsomega.1c00112
Reference32 articles.
1. Cycle-to-Cycle Intrinsic RESET Statistics in ${\rm HfO}_{2}$-Based Unipolar RRAM Devices
2. Voltage and Power-Controlled Regimes in the Progressive Unipolar RESET Transition of HfO2-Based RRAM
3. Impact of Temperature on the Resistive Switching Behavior of Embedded $\hbox{HfO}_{2}$-Based RRAM Devices
4. Investigation of resistive switching in Cu-doped HfO2thin film for multilevel non-volatile memory applications
5. Improved Synaptic Behavior Under Identical Pulses Using AlOx/HfO2Bilayer RRAM Array for Neuromorphic Systems
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1. Improved Resistive Switching Behaviors of Al/Ag-Doped Fe2O3 Film/ITO Devices Fabricated with a Radio-Frequency Co-Sputtering System;ECS Journal of Solid State Science and Technology;2023-12-01
2. Memory Performance Enhancement by Inducing Conductive Channel via Doping;Journal of Physics: Conference Series;2023-08-01
3. An Oxide-Based Bilayer ZrO₂/IGZO Memristor for Synaptic Plasticity and Artificial Nociceptor;IEEE Transactions on Electron Devices;2023-03
4. Enhanced Ga2O3-Based RRAM via Stacked Bilayer ZnO/Ga2O3;ECS Advances;2022-06-01
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