Effect of In incorporated into SbTe on phase change characteristics resulting from changes in electronic structure-Reference-Cited by-同舟云学术

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Effect of In incorporated into SbTe on phase change characteristics resulting from changes in electronic structure

Published:2010-02 Issue:5 Volume:96 Page:052112
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Jang Moon Hyung,Park Seung Jong,Lim Dong Heok,Park Sung Jin,Cho Mann-Ho,Ko Dae-Hong,Heo M. Y.,Sohn Hyun Chul,Kim Sang-Ok

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3308479

Reference13 articles.

1. Coexistence of tetrahedral- and octahedral-like sites in amorphous phase change materials

2. Effect of indium on phase-change characteristics and local chemical states of In–Ge–Sb–Te alloys

3. Refinement of the Sb2Te3 and Sb2Te2Se structures and their relationship to nonstoichiometric Sb2Te3−y Se y compounds

4. Crystal structure of bismuth selenides and bismuth and antimony tellurides

5. Proceedings of the 17th International Conference on Physics Semiconductors;Zhuze V. P.,1960

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4. Characterization of Ge ions implantation in Sb2Te3 thin films for high speed phase change memory application;Applied Physics Letters;2019-09-02

5. Understanding of relationship between dopant and substitutional site to develop novel phase-change materials based on In3SbTe2;Japanese Journal of Applied Physics;2019-02-05

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