Origin of temperature dependent conduction of current from n-4H-SiC into silicon dioxide films at high electric fields-Reference-Cited by-同舟云学术

Origin of temperature dependent conduction of current from n-4H-SiC into silicon dioxide films at high electric fields

Published:2018-02-05 Issue:6 Volume:112 Page:062101
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Xiang An¹,Xu Xingliang¹,Zhang Lin¹,Li Zhiqiang¹,Li Juntao¹,Dai Gang¹

Affiliation:

1. Microsystems and Terahertz Research Center and Institute of Electronic Engineering, China Academy of Engineering Physics, Mianyang 621999, People's Republic of China

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5006249

Reference18 articles.

1. Fundamentals of Silicon Carbide Technology

2. Silicon carbide: A unique platform for metal-oxide-semiconductor physics

3. Future Prospects of Widebandgap (WBG) Semiconductor Power Switching Devices

4. Time Dependent Dielectric Breakdown in High Quality SiC MOS Capacitors

5. Basic Mechanisms of Threshold-Voltage Instability and Implications for Reliability Testing of SiC MOSFETs

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