Direct current and microwave characterization of integrated resonant tunneling diodes
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.360483
Reference20 articles.
1. Oscillations up to 712 GHz in InAs/AlSb resonant‐tunneling diodes
2. In0.53Ga0.47As/AlAs resonant tunneling diodes with peak current densities in excess of 450 kA/cm2
3. A quasioptically stabilized resonant-tunneling-diode oscillator for the millimeter- and submillimeter-wave regions
4. Fundamental oscillations up to 200 GHz in resonant tunneling diodes and new estimates of their maximum oscillation frequency from stationary‐state tunneling theory
5. Fabrication of 200-GHz f/sub max/ resonant-tunneling diodes for integration circuit and microwave applications
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1. High peak-to-valley current ratio In0.53Ga0.47As/AlAs resonant tunneling diode with a high doping emitter;Journal of Semiconductors;2012-12
2. Electrical Methods of Monitoring and Strengthening Electron Devices;Measurement Techniques;2003-11
3. Oscillating structure defects in dielectric diodes;Measurement Techniques;2002
4. Resonance calculation for electrothermal damage to metal-insulator-metal structures;Measurement Techniques;2000-06
5. Calculation of the critical parameters of self-exciting processes in the electrothermal destruction of dielectric diodes;Measurement Techniques;2000
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