In0.53Ga0.47As/AlAs resonant tunneling diodes with peak current densities in excess of 450 kA/cm2
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.346226
Reference6 articles.
1. Resonant tunneling through quantum wells at frequencies up to 2.5 THz
2. Resonant tunneling diodes for switching applications
3. Oscillations up to 420 GHz in GaAs/AlAs resonant tunneling diodes
4. A Pseudomorphic In0.53Ga0.47As/AlAs Resonant Tunneling Barrier with a Peak-to-Valley Current Ratio of 14 at Room Temperature
5. Pseudomorphic In0.53Ga0.47As/AlAs/InAs resonant tunneling diodes with peak‐to‐valley current ratios of 30 at room temperature
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1. Record peak current density of over 1500 kA/cm2 in highly scaled AlN/GaN double-barrier resonant tunneling diodes on free-standing GaN substrates;Applied Physics Letters;2024-02-12
2. THz Resonant Tunneling Devices;Fundamentals of Terahertz Devices and Applications;2021-07-12
3. 930 kA/cm2 peak tunneling current density in GaN/AlN resonant tunneling diodes grown on MOCVD GaN-on-sapphire template;Applied Physics Letters;2019-05-20
4. Investigations of Asymmetric Spacer Tunnel Layer Diodes for High-Frequency Applications;IEEE Transactions on Electron Devices;2018-01
5. A Dual-Pass High Current Density Resonant Tunneling Diode for Terahertz Wave Applications;IEEE Electron Device Letters;2015-12
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