Study of the crystal growth of a (15,17,1) vicinal plane on a Si(110) surface using high‐temperature scanning tunneling microscopy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.356265
Reference16 articles.
1. Surface Reconstruction on a Clean Si(110) Surface Observed by RHEED
2. Scanning Tunneling Microscopy Study of the 16-Structure Appearing on a Si(110) Surface
3. Clean and metal-contaminated Si(110) surfaces studied by RHEED, XPS and STM
4. Phase transitions on clean Si(110) surfaces
5. Observation of surface reconstruction on silicon above 800 °C using the STM
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3. Spin- and angle-resolved photoemission studies of the electronic structure of Si(110)“ 16×2 ” surfaces;Physical Review B;2019-08-23
4. Domain formation mechanism of the Si(110) “ 16×2 ” reconstruction;Physical Review B;2017-05-19
5. Ultrahigh Vacuum Non-Contact Atomic Force Microscope Observation of Reconstructed Si(110) Surface;Journal of the Japan Institute of Metals;2008
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