Low activation energy field-effect transistors fabricated by bar-assisted meniscus shearing-Reference-Cited by-同舟云学术

Low activation energy field-effect transistors fabricated by bar-assisted meniscus shearing

Published:2021-09-06 Issue:10 Volume:119 Page:103301
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Berteau-Rainville Michael¹,Tamayo Adrián²,Leydecker Tim¹³,Pezeshki Atiye¹,Salzmann Ingo⁴^ORCID,Mas-Torrent Marta²,Orgiu Emanuele¹^ORCID

Affiliation:

1. Institut National de la Recherche Scientifique (INRS), Centre Énergie Matériaux Télécommunications, Varennes, Quebec G1K 9A9, Canada

2. Institute of Materials Science of Barcelona (ICMAB-CSIC), Campus UAB, 08193 Bellaterra, Spain

3. Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610054, China

4. Department of Physics, Department of Chemistry and Biochemistry, Centre for Research in Molecular Modeling (CERMM), Centre for NanoScience Research (CeNSR), Concordia University, Montreal, Quebec H4B 1R6, Canada

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

https://aip.scitation.org/doi/pdf/10.1063/5.0059735

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