On the effect of δ-doping in self-switching diodes-Reference-Cited by-同舟云学术

On the effect of δ-doping in self-switching diodes

Published:2014-09 Issue:9 Volume:105 Page:093505
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Westlund A.¹,Iñiguez-de-la-Torre I.²,Nilsson P.-Å.¹,González T.²,Mateos J.²,Sangaré P.³,Ducournau G.³,Gaquière C.³,Desplanque L.³,Wallart X.³,Grahn J.¹

Affiliation:

1. Department of Microtechnology and Nanoscience—MC2, Chalmers University of Technology, SE-412 96 Gothenburg, Sweden

2. Departamento de Física Aplicada, Universidad de Salamanca, Plaza de la Merced s/n, 37008 Salamanca, Spain

3. Institute of Electronics, Microelectronics and Nanotechnology, UMR CNRS 8520, University of Lille, CS 60069, 59652 Villeneuve d'Ascq, France

Funder

European Commission (EC)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4894806

Reference22 articles.

1. Unidirectional electron flow in a nanometer-scale semiconductor channel: A self-switching device

2. Room-temperature operation of a unipolar nanodiode at terahertz frequencies

3. Nonlinear nanochannels for room temperature terahertz heterodyne detection

4. THz operation of asymmetric-nanochannel devices

5. Experimental demonstration of direct terahertz detection at room-temperature in AlGaN/GaN asymmetric nanochannels

Cited by 12 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Characterization of trap-related transient-current effects in AlGaN/GaN nanochannels;2023 International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits (INMMIC);2023-11-08

2. Current and voltage responsivity up to 110 GHz in GaN asymmetric nano-diodes;Applied Physics Letters;2023-09-18

3. Monte Carlo analysis of the influence of surface charges on GaN asymmetric nanochannels: Bias and temperature dependence;Journal of Applied Physics;2021-09-14

5. Integration of Antenna Array and Self-Switching Graphene Diode for Detection at 28 GHz;IEEE Electron Device Letters;2019-04