Potential imaging of Si∕HfO2/polycrystalline silicon gate stacks: Evidence for an oxide dipole-Reference-Cited by-同舟云学术

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Potential imaging of Si∕HfO2/polycrystalline silicon gate stacks: Evidence for an oxide dipole

Published:2005-03-21 Issue:12 Volume:86 Page:122901
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Ludeke R.,Narayanan V.,Gusev E. P.,Cartier E.,Chey S. J.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.1890483

Reference11 articles.

1. Symposium on Very Large Scale Integration Technical Digest;Pidin S.,2002

2. Symposium on Very Large Scale Integration Technical Digest;Hobbs C.,2003

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3. Impact of defects on the high-κ/MG stack: The electrical characterization challenge;Materials Science in Semiconductor Processing;2006-12

4. Introduction of defects into HfO2 gate dielectrics by metal-gate deposition studied using x-ray photoelectron spectroscopy and positron annihilation;Journal of Applied Physics;2006-09-15

5. Vacancy-impurity complexes in polycrystalline Si used as gate electrodes of HfSiON-based metal-oxide-semiconductors probed using monoenergetic positron beams;Journal of Applied Physics;2006-08

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