Impact of defects on the high-κ/MG stack: The electrical characterization challenge-Reference-Cited by-同舟云学术

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Impact of defects on the high-κ/MG stack: The electrical characterization challenge

Published:2006-12 Issue:6 Volume:9 Page:880-884
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Pantisano Luigi,Ragnarsson L.-Å.,Houssa M.,Degraeve R.,Groeseneken G.,Schram T.,Degendt S.,Heyns M.,Afanas’ev V.,Stesmans A.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference16 articles.

1. Houssa M, Pantisano L, Ragnarsson L-Å, Degraeve R, Schram T, Pourtois G, De Gendt S, Groeseneken G, Heyns MM. Mater Sci Eng, in press.

2. VLSI Symposium;Rotondaro,2002

3. VLSI Symposium;Hobbs,2003

4. VLSI Symposium;Pantisano,2004

5. VLSI Symposium;Cartier,2004

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. (Invited) Charge Pumping and Si-SiO2 Interface Traps Electrical Characterization;ECS Transactions;2010-04-16

2. Internal photoemission at interfaces of high-κ insulators with semiconductors and metals;Journal of Applied Physics;2007-10-15

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