Spectroscopic studies of the influence of oxygen partial pressure on the incorporation of residual silicon impurities in vapor‐phase epitaxial gallium arsenide-Reference-Cited by-同舟云学术

Spectroscopic studies of the influence of oxygen partial pressure on the incorporation of residual silicon impurities in vapor‐phase epitaxial gallium arsenide

Published:1989-10-15 Issue:8 Volume:66 Page:3772-3786
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Lee B.,Arai K.,Skromme B. J.,Bose S. S.,Roth T. J.,Aguilar J. A.,Lepkowski T. R.,Tien N. C.,Stillman G. E.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.344040

Reference45 articles.

1. Effect of oxygen injection during vpe growth of GaAs Films

2. Effects of the AsCl[sub 3] Mole Fraction on the Incorporation of Germanium, Silicon, Selenium, and Sulfur into Vapor Grown Epitaxial Layers of GaAs

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