Direct Heteroepitaxy of Orientation‐Patterned GaP on GaAs by Hydride Vapor Phase Epitaxy for Quasi‐Phase‐Matching Applications-Reference-Cited by-同舟云学术

Direct Heteroepitaxy of Orientation‐Patterned GaP on GaAs by Hydride Vapor Phase Epitaxy for Quasi‐Phase‐Matching Applications

Published:2019-10-21 Issue:3 Volume:217 Page:1900627
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Strömberg Axel¹^ORCID,Omanakuttan Giriprasanth¹,Mu Tangjie¹,Natesan Pooja Vardhini¹,Tofa Tajka Syeed¹,Bailly Myriam²,Grisard Arnaud²,Gérard Bruno³,Jang Hoon¹,Pasiskevicius Valdas¹,Laurell Fredrik¹,Lourdudoss Sebastian¹,Sun Yan-Ting¹

Affiliation:

1. Department of Applied PhysicsKTH Royal Institute of Technology Roslagstullsbacken 21 10691 Stockholm Sweden

2. Physics Research GroupThales Research & Technology 1 av. A. Fresnel Palaiseau 91767 France

3. Epitaxy and Technology Platforms GroupIII-V Lab 1 av. A. Fresnel Palaiseau 91767 France

Funder

Knut och Alice Wallenbergs Stiftelse

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssa.201900627

Reference35 articles.

1. Terahertz and Mid Infrared Radiation

2. Future directions in quasi-phasematched semiconductors for mid-infrared lasers

3. Advances in nonlinear optical crystals for mid-infrared coherent sources

4. Long-wave infrared generation from femtosecond and picosecond optical parametric oscillators based on orientation-patterned gallium phosphide

5. Efficient half-harmonic generation of three-optical-cycle mid-IR frequency comb around 4 µm using OP-GaP

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1. Investigation of OP-GaP Grown on OP-GaAs Templates Using Nondestructive Reciprocal Space Mapping;Crystals;2023-01-18

2. Thick Heteroepitaxy of Binary and Ternary Semiconductor Materials for Nonlinear Frequency Conversion in the Mid and Longwave Infrared Region;physica status solidi (a);2020-11-16

3. Direct Heteroepitaxy and Selective Area Growth of GaP and GaAs on Si by Hydride Vapor Phase Epitaxy;physica status solidi (a);2020-11-02

4. Heteroepitaxy of GaAsP and GaP on GaAs and Si by low pressure hydride vapor phase epitaxy;Journal of Crystal Growth;2020-06