Thick Heteroepitaxy of Binary and Ternary Semiconductor Materials for Nonlinear Frequency Conversion in the Mid and Longwave Infrared Region-Reference-Cited by-同舟云学术

Thick Heteroepitaxy of Binary and Ternary Semiconductor Materials for Nonlinear Frequency Conversion in the Mid and Longwave Infrared Region

Published:2020-11-16 Issue:3 Volume:218 Page:2000443
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Tassev Vladimir¹^ORCID,Vangala Shivashankar¹,Brinegar Duane²,Parker Meagan²,Barlow Timothy³

Affiliation:

1. Air Force Research Laboratory Sensors Directorate Wright‐Patterson AFB OH 45433 USA

2. KBR Beavercreek OH 45431 USA

3. Air Force Material Command Law Office Wright‐Patterson AFB OH 45431 USA

Funder

Air Force Office of Scientific Research

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssa.202000443

Reference62 articles.

1. The nonlinear optical coefficient, phasematching, and optical damage in the chalcopyrite AgGaSe2

2. Periodically poled lithium niobate and quasi-phase-matched optical parametric oscillators

3. Selective growth of GaAs by HVPE: keys for accurate control of the growth morphologies

4. GaAs optical parametric oscillator with circularly polarized and depolarized pump

5. Growth of mm-thick orientation-patterned GaAs for IR and THZ generation

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