Selective growth of GaAs by HVPE: keys for accurate control of the growth morphologies
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference50 articles.
1. Application of AP MOVPE to a new butt-coupling scheme
2. Butt‐coupled InGaAs metal‐semiconductor‐metal waveguide photodetector formed by selective area regrowth
3. Lateral and longitudinal patterning of semiconductor structures by crystal growth on nonplanar and dielectric-masked GaAs substrates: application to thickness-modulated waveguide structures
4. GaInAs/InP selective area metalorganic vapor phase epitaxy for one‐step‐grown buried low‐dimensional structures
5. GaAs tetrahedral quantum dot structures fabricated using selective area metalorganic chemical vapor deposition
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