Mechanism of generation of f–f radiation in semiconductor heterostructures
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.122758
Reference10 articles.
1. Studies of GaAs:Er impact excited electroluminescence devices
2. Room‐temperature electroluminescence from Er‐doped crystalline Si
3. Room‐temperature sharp line electroluminescence at λ=1.54 μm from an erbium‐doped, silicon light‐emitting diode
4. Photoluminescence of ytterbium‐doped porous silicon
5. Influence of Erbium Doping on Structure and Optical Properties of the InGaAs/GaAs Superlattices
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1. Morphology-dependent upconversion luminescence of ZnO:Er3+ nanocrystals;Journal of Luminescence;2008-01
2. Correlation between luminescent properties and structure organization in AlGaN/GaN superlattices annealed after erbium ion implantation;Technical Physics;2006-12
3. Influence of an Increase in the Implantation Dose of Erbium Ions and Annealing Temperature on Photoluminescence in AlGaN∕GaN Superlattices and GaN Epitaxial Layers;Semiconductors;2005
4. Photoluminescence in Er-implanted AlGaN/GaN superlattices and GaN epilayers;Physica B: Condensed Matter;2003-12
5. Local structure analysis of an optically active center in Er-doped ZnO thin film;Journal of Applied Physics;2001-04
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