Photoluminescence in Er-implanted AlGaN/GaN superlattices and GaN epilayers-Reference-Cited by-同舟云学术

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Photoluminescence in Er-implanted AlGaN/GaN superlattices and GaN epilayers

Published:2003-12 Issue: Volume:340-342 Page:1108-1112
ISSN:0921-4526
Container-title:Physica B: Condensed Matter
language:en
Short-container-title:Physica B: Condensed Matter

Author:

Sobolev N.A.,Emel’yanov A.M.,Sakharov V.I.,Serenkov I.T.,Shek E.I.,Besyul`kin A.I.,Lundin W.V.,Shmidt N.M.,Usikov A.S.,Zavarin E.E.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference9 articles.

1. Optical Activation of Er3+Implanted in Silicon by Oxygen Impurities

2. Optoelectronic Properties and Applications of Rare-Earth-Doped GaN

3. Mechanism of generation of f–f radiation in semiconductor heterostructures

4. Effect of annealing on the optical and structural properties of GaN:Er

5. Defect studies in crystals by means of channeling

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Room-temperature infrared photoluminescence in GaN doped with various impurities;Optical Materials;2019-08

2. Eu-Doped AlGaN/GaN Superlattice-Based Diode Structure for Red Lighting: Excitation Mechanisms and Active Sites;ACS Applied Nano Materials;2018-07-17

3. Studies of III-Nitride Superlattice Structures Implanted with Lanthanide Ions;MRS Proceedings;2008

4. Correlation between luminescent properties and structure organization in AlGaN/GaN superlattices annealed after erbium ion implantation;Technical Physics;2006-12

5. Structural state of III nitride layers implanted with erbium ions;Physics of the Solid State;2006-09

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