Nanoscale p-n junction fabrication in silicon due to controlled dopant electromigration
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1355009
Reference12 articles.
1. Low temperature device creation in Si via fast Li electromigration
2. Electronic effects of ion mobility in semiconductors: Mixed electronic–ionic behavior and device creation in Si:Li
3. Junction electroluminescence from microscopic diode structures in CuInSe2, prepared by electric field-assisted doping
4. Electronic effects of ion mobility in semiconductors: Semionic behaviour of CuInSe2
5. Room temperature, local tailoring of electronic properties of Hg0.3Cd0.7Te by applying an external electric field
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1. Nanoscale lateral light emitting p–n junctions in AlGaAs/GaAs;Microelectronic Engineering;2003-06
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