Junction electroluminescence from microscopic diode structures in CuInSe2, prepared by electric field-assisted doping
Author:
Publisher
Wiley
Subject
Mechanical Engineering,Mechanics of Materials,General Materials Science
Reference19 articles.
1. Room-Temperature, Electric Field-Induced Creation of Stable Devices in CulnSe 2 Crystals
2. Room temperature, local tailoring of electronic properties of Hg0.3Cd0.7Te by applying an external electric field
3. unpublished.
4. Electric-field-induced room-temperature doping in CuInSe2
5. Junction electroluminescence in CuInSe2
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