Research progress of double perovskite ferroelectric thin films

Abstract

Double perovskite ferroelectric thin films are completely new material systems derived from single perovskite. Their diversity of composition and structure and the tendency for spontaneous atomic ordering broaden the path for the development of ferroelectric thin films. The ordered double perovskite ferroelectric thin films lead to excellent ferroelectric, dielectric, magnetic, and optical properties, promising further applications in photovoltaic cells, information memory, and spintronic and photoelectric devices, where the intrinsic coupling and tuning of multiple properties could also push it into multifunctional intersecting devices. However, complex internal physical mechanisms and difficult preparation conditions have prevented its further development. Based on ordered/disordered ferroelectric thin films of double perovskites, this paper first discusses ordered characterization methods such as superstructure reflection/diffraction peaks, especially for epitaxial thin films, saturation magnetization (macroscopic), and scanning transmission electron microscopy (microscopic). In response to the generally poor ordering of present systems, the paper also reviews the internal structure of the material and the external synthesis conditions that affect the ordering, including the valence and radii of the cations, preparation methods, element substitution and strain engineering, in the hope of triggering further research into ordered double perovskite ferroelectrics. Combined with the current state of research on existing double perovskite ferroelectricity thin film systems, advances in the fields of ferroelectric photovoltaics, magnetoelectric coupling, dielectric tunability, resistive switching, and photoelectric coupling have been presented. Finally, the challenges facing the material system are discussed and an outlook is provided for the development of the field.