Electron and hole dynamics in amorphous silicon
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.341465
Reference19 articles.
1. Recombination ina-Si: H: Transitions through defect states
2. Dispersive Transport and Recombination Lifetime in Phosphorus-Doped Hydrogenated Amorphous Silicon
3. Localized states in doped amorphous silicon
4. Recombination processes ina-Si:H: Spin-dependent photoconductivity
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1. Effect of buffer layer on minority carrier lifetime and series resistance of bifacial heterojunction silicon solar cells analyzed by impedance spectroscopy;Thin Solid Films;2006-08
2. Characterization of amorphous silicon films by contactless transient photoconductivity measurements;Applied Physics A Materials Science & Processing;1995-12
3. Optically detected photocarrier transport in amorphous silicon: a review;Journal of Non-Crystalline Solids;1992-01
4. Time‐resolved reflectivity studies of the GaAs(100)/oxide and GaAs(100)/ZnSe interface;Applied Physics Letters;1991-09-16
5. Measurements of the Transient Photoconductivity During the Growth of A-Si:H Multilayers;MRS Proceedings;1990
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