Hydrogen as the cause of pit formation during laser recrystallization of silicon‐on‐insulator films
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.343941
Reference13 articles.
1. Surface Stabilization of Polycrystalline‐Silicon Films during Laser Recrystallization
2. Effects of various encapsulating films on laser recrystallization of silicon on SiO2
3. A semiempirical model for the laser‐induced molten zone in the laser recrystallization process
4. The Composition and Physical Properties of LPCVD Silicon Nitride Deposited with Different NH 3 / SiH2Cl2 Gas Ratios
5. Hydrogen in low‐pressure chemical‐vapor‐deposited silicon (oxy)nitride films
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1. Inverse staggered poly-Si and amorphous Si double structure TFT's for LCD panels with peripheral driver circuits integration;IEEE Transactions on Electron Devices;1996-05
2. Inverse staggered polycrystalline and amorphous silicon double structure thin film transistors;Applied Physics Letters;1995-05-29
3. Explosive crystallization of amorphous Si3N4films on silicon during silicon laser melting;Journal of Applied Physics;1993-10-15
4. Incorporation of nitrogen in Si3N4‐capped silicon by cw Ar+‐laser melting;Journal of Applied Physics;1993-10-15
5. Laser irradiation of amorphous thin films;Thin Solid Films;1992-10
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