Secondary ion mass spectrometry study of lightly dopedp‐type GaAs films grown by molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.331193
Reference13 articles.
1. High‐purity GaAs and Cr‐doped GaAs epitaxial layers by MBE
2. Electrical characterization of n- and p- type GaAs films grown by molecular beam epitaxy
3. A photoluminescence study of beryllium‐doped GaAs grown by molecular beam epitaxy
4. Very low current threshold GaAs‐AlxGa1−xAs double‐heterostructure lasers grown by molecular beam epitaxy
5. Influence of growth conditions on the threshold current density of double-heterostructure lasers prepared by molecular-beam epitaxy
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1. Calcium impurity as a source of non-radiative recombination in (In,Ga)N layers grown by molecular beam epitaxy;Applied Physics Letters;2016-11-21
2. SIMS Detection in the 1012 Atoms cm-3 Range;Surface and Interface Analysis;1997-09
3. Molecular Beam Epitaxy of High-Quality GaAs and AlGaAs;Molecular Beam Epitaxy;1995
4. Be‐doped GaAs layers grown at a high As/Ga ratio by molecular beam epitaxy;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;1994-07
5. Some characteristics of heavily Be-doped GaAs layers grown by molecular beam epitaxy;Thin Solid Films;1993-11
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