Author:
Hu Yu,Schøn Hendrik,Nielsen Øyvind,Johannes Øvrelid Eivind,Arnberg Lars
Subject
General Physics and Astronomy
Reference18 articles.
1. Recombination activity of interstitial iron and other transition metal point defects in p- and n-type crystalline silicon
2. S. W. Glunz, J. Benick, D. Biro, M. Bivour, M. Hermle, D. Pysch, M. Rauer, C. Reichel, A. Richter, M. Rüdiger, C. Schmiga, A. Wolf, and R. Preu, Proceedings of the 35th IEEE-PVSC, Honolulu, HI, 20–25 June 2010 (IEEE, New York, 2010), pp. 50–56.
3. A Comparison of Bulk Lifetime, Efficiency, and Light-Induced Degradation in Boron- and Gallium-Doped Cast mc-Si Solar Cells
4. Oxygen-related minority-carrier trapping centers in p-type Czochralski silicon
5. On the use of a bias-light correction for trapping effects in photoconductance-based lifetime measurements of silicon
Cited by
36 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献