Effects of stress annealing in nitrogen on the effective contact-potential difference, charges, and traps at the Si/SiO2 interface of metal–oxide–semiconductor devices-Reference-Cited by-同舟云学术

Effects of stress annealing in nitrogen on the effective contact-potential difference, charges, and traps at the Si/SiO2 interface of metal–oxide–semiconductor devices

Published:2002-08-15 Issue:4 Volume:92 Page:2198-2201
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Przewlocki Henryk M.,Massoud Hisham Z.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.1489499

Reference4 articles.

1. Charge‐transfer dipole moments at the Si–SiO2interface

2. Effects of stress annealing in nitrogen on the index of refraction of silicon dioxide layers in metal–oxide–semiconductor devices

3. Internal photoemission in the MOS system at low electric fields in the dielectric. Model and applications

4. Correlation between midgap interface state density and thickness‐averaged oxide stress and strain at Si/SiO2interfaces formed by thermal oxidation of Si

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