Room-temperature continuous-wave operation of GaInNAs∕GaAs quantum dot laser with GaAsN barrier grown by solid source molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1789236
Reference16 articles.
1. GaInNAs: A Novel Material for Long-Wavelength-Range Laser Diodes with Excellent High-Temperature Performance
2. 1.3-μm continuous-wave lasing operation in GaInNAs quantum-well lasers
3. Reduced threshold current densities of (GaIn)(NAs)/GaAs single quantum well lasers for emission wavelengths in the range 1.28 – 1.38 [micro sign]m
4. GaInAsN/GaAs laser diodes operating at 1.52 [micro sign]m
5. Gain and the threshold of three-dimensional quantum-box lasers
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1. Dilute nitride InNP quantum dots: Growth and photoluminescence mechanism;Applied Physics Letters;2014-10-27
2. Optimization of InGaAsN(Sb)/GaAs quantum dots for optical emission at 1.55μm with low optical degradation;Journal of Crystal Growth;2011-05
3. Design issues of 1.55 µm emitting GaInNAs quantum dots;Optical and Quantum Electronics;2008-01-08
4. Bulk and nanoscale GaN: Role ofGadstates;Physical Review B;2007-08-08
5. High-Temperature Continuous-Wave Operation of GaInAsN–GaAs Quantum-Dot Laser Diodes Beyond 1.3 $\mu$m;IEEE Photonics Technology Letters;2007-07
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