Design issues of 1.55 µm emitting GaInNAs quantum dots
Author:
Publisher
Springer Science and Business Media LLC
Subject
Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Link
http://link.springer.com/content/pdf/10.1007/s11082-007-9178-1.pdf
Reference10 articles.
1. Andreev A.D. and O’Reilly E.P. (2005). Optical matrix element in InAs/GaAs quantum dots: dependence on quantum dot parameters. Appl. Phys. Lett. 87: 213106
2. Gao Q., Buda M., Tan H.H. and Jagadish C. (2005). Room-temperature preperation of InGaAsN quantum dot lasers grown by MOCVD. Electron. Solid-State Lett. 8: G57–G59
3. Kondow M., Kitatani T., Nakatsuka S., Larson M.C., Nakahara K., Yazawa Y., Okai M. and Uomi K. (1997). GaInNAs: a novel material for long-wavelength semiconductor lasers. IEEE J. Select. Topic Quantum Electron. 3: 719–730
4. Liu C.Y., Yoon S.F., Sun Z.Z. and Yew K.C. (2006). High-temperature operation of self-assembled GaInNAs/GaAsN quantum-dot lasers grown by solid-source molecular-beam epitaxy. Appl. Phys. Lett. 88: 081105
5. Makino S., Miyamoto T., Kageyama T., Nishiyama N., Koyama F. and Iga K. (2000). GaInNAs/GaAs quantum dots grown by chemical beam epitaxy. J. Cryst. Growth 221: 561–565
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