High-temperature operation of self-assembled GaInNAs∕GaAsN quantum-dot lasers grown by solid-source molecular-beam epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2178231
Reference19 articles.
1. GaInNAs: a novel material for long-wavelength semiconductor lasers
2. High-performance 1200-nm InGaAs and 1300-nm InGaAsN quantum-well lasers by metalorganic chemical vapor deposition
3. Temperature-Sensitivity Analysis of 1360-nm Dilute-Nitride Quantum-Well Lasers
4. Optimization of ridge height for the fabrication of high performance InGaAsN ridge waveguide lasers with pulsed anodic oxidation
5. Very low threshold current density 1.3μm GaInNAs single-quantum well lasers grown by molecular beam epitaxy
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2. The effects of the intense laser field on donor impurities in a cylindrical quantum dot under the electric field;Physica E: Low-dimensional Systems and Nanostructures;2011-06
3. Optimization of InGaAsN(Sb)/GaAs quantum dots for optical emission at 1.55μm with low optical degradation;Journal of Crystal Growth;2011-05
4. Photoluminescence Study of Rapid Thermal Annealed GaAs/AlGaAs Quantum Dots Formed by Low Energy Ion Sputtering;Advanced Science Letters;2010-12-01
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