GaSb films grown by vacuum chemical epitaxy using triethyl antimony and triethyl gallium sources
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.337881
Reference8 articles.
1. A new low temperature III–V multilayer growth technique: Vacuum metalorganic chemical vapor deposition
2. Epitaxial films grown by vacuum MOCVD
3. Epitaxial growth from organometallic sources in high vacuum
4. Vacuum chemical epitaxy utilizing organometallic sources
5. Homoepitaxial Growth of InSb by Vacuum Metal-Organic Chemical Vapor Deposition
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