Deep levels and impurities at growth‐interrupted interfaces: Temperature‐ and gas‐switched metalorganic chemical vapor deposition of GaAs with tertiarybutylarsenic-Reference-Cited by-同舟云学术

Deep levels and impurities at growth‐interrupted interfaces: Temperature‐ and gas‐switched metalorganic chemical vapor deposition of GaAs with tertiarybutylarsenic

Published:1990-02-15 Issue:4 Volume:67 Page:2100-2108
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Vook D. W.,Gibbons J. F.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.345569

Reference27 articles.

1. Metalorganic chemical vapor deposition of III‐V semiconductors

2. Atomic layer epitaxy of III‐V binary compounds

3. Modulation Doped n-AlGaAs/GaAs Heterostructures Grown by Flow-rate Modulation Epitaxy

4. The preparation and characterization of strained-layer superlattices in the GaAs + GaP System

5. The use of metalorganic chemical vapor deposition to prepare device quality Ga(AsP) strained-layer superlattices

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4. Rapid Thermal Processing–Based Epitaxy;Rapid Thermal Processing;1993

5. Chapter 8 Deep Level Defects in Epitaxial III/V Materials;Imperfections in III/V Materials;1993