Evolution of threading dislocations in GaN epitaxial laterally overgrown on GaN templates using self-organized graphene as a nano-mask-Reference-Cited by-同舟云学术

Evolution of threading dislocations in GaN epitaxial laterally overgrown on GaN templates using self-organized graphene as a nano-mask

Published:2017-09-04 Issue:10 Volume:111 Page:102105
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Xu Yu¹²³,Cao Bing⁴⁵,He Shunyu⁴⁵,Qi Lin⁴⁵,Li Zongyao⁴⁵,Cai Demin²,Zhang Yumin¹²³,Ren Guoqiang¹²,Wang Jianfeng¹²,Wang Chinhua⁴⁵,Xu Ke¹²

Affiliation:

1. Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences (CAS), Suzhou 215123, People's Republic of China

2. Suzhou Nanowin Science and Technology Co., Ltd., Suzhou 215123, People's Republic of China

3. University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China

4. College of Physics, Optoelectronics and Energy and Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, Suzhou 215006, People's Republic of China

5. Key Lab of Advanced Optical Manufacturing Technologies of Jiangsu Province and Key Lab of Modern Optical Technologies of Education Ministry of China, Soochow University, Suzhou 215006, People's Republic of China

Funder

National key R&D Program of China

National Natural Science Foundation of China (NSFC)

China National Funds for Distinguished Young Scientists

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4998924

Reference21 articles.

1. Metal organic vapour phase epitaxy of GaN and lateral overgrowth