Determination of the valence‐band discontinuity in Be‐doped GaAs/Al0.3Ga0.7As multiple‐quantum wells using admittance spectroscopy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.356507
Reference20 articles.
1. Admittance spectroscopy of impurity levels in Schottky barriers
2. Measurement of heterojunction band offsets by admittance spectroscopy: InP/Ga0.47In0.53As
3. Admittance spectroscopy measurement of band offsets in strained layers of InxGa1−xAs grown on InP
4. Admittance spectroscopy measurement of band offset in GaAs‐GaAlAs multiquantum well
5. Admittance spectroscopy measurements of band offsets in Si/Si1−xGex/Si heterostructures
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1. Ground-state interband transition of individual self-assembled InAs/Al0.6Ga0.4As quantum dots observed by scanning-tunneling-microscope light-emission spectroscopy;Journal of Applied Physics;2004-02
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3. Influence of defects on the temperature dependence of the density of electrons in the two-dimensional and doped channels of selectively doped AlxGa1−x As/GaAs heterostructures;Technical Physics;1998-10
4. Electronic properties of Si/Si[sub 1−x−y]Ge[sub x]C[sub y] heterojunctions;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1998-05
5. Measurement of band offsets in Si/Si[sub 1−x]Ge[sub x] and Si/Si[sub 1−x−y]Ge[sub x]C[sub y] heterojunctions;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1997-07
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