Two distinct carrier localization in green light-emitting diodes with InGaN/GaN multiple quantum wells
Author:
Funder
NNSFC
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4866815
Reference25 articles.
1. The Roles of Structural Imperfections in InGaN-Based Blue Light-Emitting Diodes and Laser Diodes
2. Probing Individual Localization Centers in anInGaN/GaNQuantum Well
3. An analysis of temperature dependent photoluminescence line shapes in InGaN
4. Carrier localization mechanisms in InxGa1−xN/GaN quantum wells
5. Effect of Exciton Localization on the Quantum Efficiency of GaN/(In,Ga)N Multiple Quantum Wells
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3. InGaN quantum well with gradually varying indium content for high-efficiency GaN-based green light-emitting diodes;Optics Letters;2022-02-25
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