Leakage current improvement of nitride-based light emitting diodes using CrN buffer layer and its vertical type application by chemical lift-off process
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3155422
Reference16 articles.
1. High brightness GaN vertical light emitting diodes on metal alloyed substrate for general lighting application
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3. Damage-free separation of GaN thin films from sapphire substrates
4. Optical Process for Liftoff of Group III-Nitride Films
5. Mechanics of laser-assisted debonding of films
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