Analytic expressions for impact ionization rates and secondary particle energy distributions in semiconductors
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.123925
Reference8 articles.
1. New hot-carrier injection and device degradation in submicron MOSFETs
2. Electron Scattering by Pair Production in Silicon
3. Impact‐ionization model consistent with the band structure of semiconductors
4. A Monte Carlo simulation of anisotropic electron transport in silicon including full band structure and anisotropic impact‐ionization model
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3. Modelling of radiation conductivity by statistic particle method;Keldysh Institute Preprints;2016
4. Hot-electron injection in stacked-gate metal-oxide-semiconductor field-effect transistors;Journal of Applied Physics;2005-05-15
5. Role of e-e scattering in the enhancement of channel hot carrier degradation of deep sub-micron NMOSFETs at high V/sub GS/ conditions;2001 IEEE International Reliability Physics Symposium Proceedings. 39th Annual (Cat. No.00CH37167)
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