New hot-carrier injection and device degradation in submicron MOSFETs-Reference-Cited by-同舟云学术

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New hot-carrier injection and device degradation in submicron MOSFETs

Published:1983 Issue:3 Volume:130 Page:144
ISSN:0143-7100
Container-title:IEE Proceedings I Solid State and Electron Devices
language:en
Short-container-title:IEE Proc. I Solid State Electron. Devices UK

Author:

Takeda E.,Nakagome Y.,Kume H.,Asai S.

Publisher

Institution of Engineering and Technology (IET)

Subject

General Engineering

Link

https://digital-library.theiet.org/content/journals/10.1049/ip-i-1.1983.0026?crawler=true&mimetype=application/pdf

Reference18 articles.

Cited by 81 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

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4. Ultralow-Power Localization of Insect-Scale Drones: Interplay of Probabilistic Filtering and Compute-in-Memory;IEEE Transactions on Very Large Scale Integration (VLSI) Systems;2022-01

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