Electron velocity‐field characteristics of In0.52Al0.48As
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.107594
Reference21 articles.
1. High-performance submicrometer AlInAs-GaInAs HEMT's
2. Charge injection logic
3. 1.5–1.6‐μm Ga0.47In0.53As/Al0.48In0.52As multiquantum well lasers grown by molecular beam epitaxy
4. AlInAs-GaInAs HEMTs utilizing low-temperature AlInAs buffers grown by MBE
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1. Comprehensive Studies on Steady-State and Transient Electronic Transport in In0.52Al0.48As;Journal of Electronic Materials;2021-04-15
2. Full-band Monte Carlo simulation of high-energy carrier transport in single photon avalanche diodes with multiplication layers made of InP, InAlAs, and GaAs;Journal of Applied Physics;2012-05-15
3. Investigation of Gain-Bandwidth Limitations in Separate Absorption, Charge and Multiplication InAlAs/InGaAs Avalanche Photodiodes using Frozen Field Monte Carlo Simulations;Integrated Photonics Research, Silicon and Nanophotonics and Photonics in Switching;2010
4. Analysis of the Short-Channel Effect in 50 nm InAlAs/InGaAs Metamorphic High Electron Mobility Transistors;Journal of the Korean Physical Society;2008-12-15
5. Avalanche Multiplication in InAlAs;IEEE Transactions on Electron Devices;2007-01
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