Thickness-dependent electron mobility of single and few-layer MoS2 thin-film transistors
Author:
Affiliation:
1. School of Electrical Engineering, Korea University, Seoul 02841, Korea
2. School of Advanced Materials Engineering, Kookmin University, Seoul 02707, Korea
Funder
Ministry of Education (MOE)
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4953809
Reference18 articles.
1. Electronics and optoelectronics of two-dimensional transition metal dichalcogenides
2. The chemistry of two-dimensional layered transition metal dichalcogenide nanosheets
3. Emerging Photoluminescence in Monolayer MoS2
4. Atomically ThinMoS2: A New Direct-Gap Semiconductor
5. Single-layer MoS2 transistors
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