Defects in neutron transmutation doped silicon studied by positron annihilation lifetime measurements
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.372398
Reference7 articles.
1. Transmutation-Produced Germanium Semiconductors
2. Preparation of Uniform Resistivity n-Type Silicon by Nuclear Transmutation
3. The effect of vacancy formation on the temperature dependence of the positron lifetime
4. Positron annihilation and defects in metals
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3. Properties of Neutron Doped Multicrystalline Silicon for Solar Cells;Acta Physica Polonica A;2008-04
4. Annealing of electron-, proton-, and ion-produced vacancies in Si;Physical Review B;2006-03-10
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