Effective electron mass and plasma filter characterization ofn-type InGaAs and InAsP
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1504170
Reference32 articles.
1. Auger recombination in InGaAsP
2. Auger recombination in direct-gap semiconductors: band-structure effects
3. Nonlocal pseudopotential calculations for the electronic structure of eleven diamond and zinc-blende semiconductors
4. Recombination in Semiconductors by a Light Hole Auger Transition
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3. Transport Properties in InAs Thin Films with Different Degrees of Disorder Near the Metal–Insulator Transition;Journal of Electronic Materials;2018-11-07
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