Long-Term Stability and Optoelectronic Performance Enhancement of InAsP Nanowires with an Ultrathin InP Passivation Layer-Reference-Cited by-同舟云学术

Long-Term Stability and Optoelectronic Performance Enhancement of InAsP Nanowires with an Ultrathin InP Passivation Layer

Published:2022-04-14 Issue:8 Volume:22 Page:3433-3439
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Chen LuLu¹,Adeyemo Stephanie O.²,Fonseka H. Aruni³^ORCID,Liu Huiyun⁴,Kar Srabani²,Yang Hui⁵,Velichko Anton⁶,Mowbray David J.⁶^ORCID,Cheng Zhiyuan¹^ORCID,Sanchez Ana M.³^ORCID,Joyce Hannah J²,Zhang Yunyan¹⁴^ORCID

Affiliation:

1. School of Micro-Nano Electronics, Zhejiang University, Hangzhou, Zhejiang 311200, China

2. Electrical Engineering Division, Department of Engineering, University of Cambridge, 9 JJ Thomson Avenue, Cambridge CB3 0FA, United Kingdom

3. Department of Physics, University of Warwick, Coventry CV4 7AL, United Kingdom

4. Department of Electronic and Electrical Engineering, University College London, London WC1E 7JE, United Kingdom

5. Institute for Materials Discovery, University College London, Roberts Building, Malet Place, London, WC1E 7JE, United Kingdom

6. Department of Physics and Astronomy and the Photon Science Institute, University of Sheffield, Sheffield S3 7RH, United Kingdom

Funder

Engineering and Physical Sciences Research Council

Leverhulme Trust

H2020 European Research Council

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.nanolett.2c00805

Reference42 articles.

1. Functional Nanowires

2. III–V nanowires and nanowire optoelectronic devices

3. Nanowire photonics

4. 25th Anniversary Article: Semiconductor Nanowires - Synthesis, Characterization, and Applications

5. Semiconductor Nanowire: What’s Next?

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