Improvement of wet-oxidized AlxGa1−xAs (x∼1) through the use of AlAs/GaAs digital alloys
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.126403
Reference12 articles.
1. Hydrolyzation oxidation of AlxGa1−xAs‐AlAs‐GaAs quantum well heterostructures and superlattices
2. Cavity characteristics of selectively oxidized vertical‐cavity lasers
3. Buried tunnel contact junction AlGaAs-GaAs-InGaAs quantum well heterostructure lasers with oxide-defined lateral currents
4. AlxGa1−xAs–GaAs metal–oxide semiconductor field effect transistors formed by lateral water vapor oxidation of AlAs
5. Collector-up AlGaAs/GaAs heterojunction bipolar transistors using oxidised AlAs for current confinement
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